The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- High voltage capability
- Very high switching speed
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