BULD742C

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High voltage fast-switching NPN power transistor

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Product overview

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.

  • All features

    • Low spread of dynamic parameters
    • Minimum lot-to-lot spread for reliable operation
    • High voltage capability
    • Very high switching speed

EDA Symbols, Footprints and 3D Models

STMicroelectronics - BULD742C

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
BULD742CT4
Active
DPAK Industrial Ecopack2

BULD742CT4

Package:

DPAK

Material Declaration**:

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Marketing Status

Active

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DPAK

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Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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BULD742CT4
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors