Product overview
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
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All features
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- High voltage capability
- Very high switching speed
EDA Symbols, Footprints and 3D Models
STMicroelectronics - BULD742C
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Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| BULD742CT4 | Active | DPAK | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| BULD742CT4 | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tape and Reel | DPAK | -65 | 150 | CHINA | | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors