MDmesh DK5 series

With a 950 to 1050 V breakdown voltage, MDmesh DK5 MOSFETs are ST’s first very-high voltage fast recovery diode series. They feature a very low gate charge, as low as 45 nC, and the industry’s best reverse recovery time (t_rr) of 250 ns (typ.), making them ideal for ZVS LLC resonant converters in high-power applications such as industrial welders, plasma generators, high-frequency induction melting/heating and X-ray machines.
Thanks to the industry’s lowest on-resistance (R_DS(on)) of 0.12 Ω (V_GS = 10 V, I_D = 23 A ) and excellent ruggedness, the MDmesh DK5 MOSFET series is also suitable for hard switching topologies.
MDmesh DK5 MOSFETs are available in a wide range of through-hole and SMD power packages including long-lead TO-247 and ISOTOP packages.

Main characteristics:

Industry’s best Q_g (45 nC) among fast diode MOSFETs
Lowest reverse recovery charge (250 ns typ.) among VHV fast diode MOSFETs
Industry’s lowest R_DS(on) (0.12 Ω in Max247 and ISOTOP packages)
Extremely good Coss/Ciss profiles

STY50N105DK5
N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 package
STE60N105DK5
N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package
STWA20N95DK5
N-channel 950 V, 0.275 Ohm typ., 17 A MDmesh DK5 Power MOSFET in TO-247 long leads package
STW20N95DK5
N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh DK5 Power MOSFET in TO-247 package
STWA40N95DK5
N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 long leads package
STW40N95DK5
N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package

MDmesh DK5 MOSFETs

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No availability reported, please contact our Sales office