Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

    主な特徴

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Low capacitance

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パッケージ
Packing Type
Marketing Status
Budgetary Price (US$)*
数量
ECCN (US)
Country of Origin
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SCTH100N65G2-7AG H2PAK-7 Tape And Reel
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

SCTH100N65G2-7AG

パッケージ

H2PAK-7

Packing Type

Tape And Reel

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技術文書

    • Description バージョン サイズ アクション
      DS12773
      Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
      1.0
      617.55 KB
      PDF
      DS12773

      Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

    • Description バージョン サイズ アクション
      AN4671
      How to fine tune your SiC MOSFET gate driver to minimize losses
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      AN3152
      The right technology for solar converters
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      AN4671

      How to fine tune your SiC MOSFET gate driver to minimize losses

      AN3152

      The right technology for solar converters

    • Description バージョン サイズ アクション
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
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      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

    • Description バージョン サイズ アクション
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

Publications and Collaterals

    • Description バージョン サイズ アクション
      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
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      SiC MOSFETs: The real breakthrough in high-voltage switching

    • Description バージョン サイズ アクション
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    • Description バージョン サイズ アクション
      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
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      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
SCTH100N65G2-7AG
Active
H2PAK-7 オートモーティブ Ecopack1

SCTH100N65G2-7AG

Package:

H2PAK-7

Material Declaration**:

PDF XML

Marketing Status

Active

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.