-
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
主な特徴
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitance
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| SCTH35N65G2V-7AG | H2PAK-7 | Tape And Reel |
アクティブ
|
16 | 1000 | EAR99 | CHINA | 在庫チェック |
SCTH35N65G2V-7AG
パッケージ
H2PAK-7梱包タイプ
Tape And ReelUnit Price (US$)
16.0*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | 材料宣誓書** |
|---|---|---|---|---|---|
| SCTH35N65G2V-7AG |
アクティブ
|
H2PAK-7 | オートモーティブ | Ecopack1 |
|
SCTH35N65G2V-7AG
Package:
H2PAK-7Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
