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SCTH35N65G2V-7AG

量産中
MySTに保存

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

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製品概要

概要

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • 特徴

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Source sensing pin for increased efficiency
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関連アプリケーション

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製品スペック (1)

Resource title
Latest update
DS12029 Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package 5.0
11 Jan 2021
11 Jan 2021
DS12029 Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package 5.0

アプリケーションノート (3)

Resource title
Latest update
AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses 1.1
03 Apr 2020
03 Apr 2020
AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses 1.1
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
15 Jul 2019
15 Jul 2019
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
AN3152 The right technology for solar converters 1.4
13 Sep 2018
13 Sep 2018
AN3152 The right technology for solar converters 1.4

技術ノート & 解説 (2)

Resource title
Latest update
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
03 Apr 2020
03 Apr 2020
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
TN1340 Recommendation for die sintering with Ag finishing 1.0
22 Sep 2020
22 Sep 2020
TN1340 Recommendation for die sintering with Ag finishing 1.0

ユーザ･マニュアル (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

フライヤ (5)

Resource title
Latest update
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
01 Feb 2021
01 Feb 2021
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
14 Oct 2020
14 Oct 2020
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
SiC MOSFET, the real breakthrough in high-voltage switching 1.1
15 May 2020
15 May 2020
SiC MOSFET, the real breakthrough in high-voltage switching 1.1
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
18 Mar 2021
18 Mar 2021
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

パンフレット (1)

Resource title
Latest update
Electric vehicle (EV) ecosystem 1.1
23 Mar 2020
23 Mar 2020
Electric vehicle (EV) ecosystem 1.1

カンファレンス･ペーパー (5 of 7)

Resource title
Latest update
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
23 Jul 2018
23 Jul 2018
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
23 Mar 2020
23 Mar 2020
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
25 Jul 2018
25 Jul 2018
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
25 Jul 2018
25 Jul 2018
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
23 Jul 2018
23 Jul 2018
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
23 Jul 2018
23 Jul 2018
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
Wide bandgap materials: revolution in automotive power electronics 1.0
23 Mar 2020
23 Mar 2020
Wide bandgap materials: revolution in automotive power electronics 1.0
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STMicroelectronics - SCTH35N65G2V-7AG

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品質 & 信頼性

製品型番 Marketing Status パッケージ グレード RoHSコンプライアンスグレード 材料宣誓書**
SCTH35N65G2V-7AG
量産中
H2PAK-7 オートモーティブ Ecopack1

SCTH35N65G2V-7AG

Package:

H2PAK-7

Material Declaration**:

PDF XML
More Info

Marketing Status

量産中

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.comで提供している材料宣誓書は、パッケージ･ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

サンプル & 購入

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最大
SCTH35N65G2V-7AG Available at 3 distributors

販売代理店在庫SCTH35N65G2V-7AG

販売代理店
地域 在庫 最小発注数量 パートナー企業リンク
DIGIKEY WORLDWIDE 996 1 発注する
MOUSER WORLDWIDE 495 1 発注する
ANGLIA Live EUROPE 3 1 発注する

販売代理店在庫データ: 2021-04-21

販売代理店

DIGIKEY

在庫

996

Min.Order

1

地域

WORLDWIDE 発注する

MOUSER

在庫

495

Min.Order

1

地域

WORLDWIDE 発注する

ANGLIA Live

在庫

3

Min.Order

1

地域

EUROPE 発注する

販売代理店在庫データ: 2021-04-21

Free Sample Buy Direct
量産中
EAR99 NEC Tape And Reel H2PAK-7 - - CHINA 16.0 / 1k

SCTH35N65G2V-7AG

製品ステータス

量産中

ECCN (US)

EAR99
詳細情報

Budgetary Price (US$)*/Qty

16.0 / 1k

販売代理店在庫SCTH35N65G2V-7AG

販売代理店
地域 在庫 最小発注数量 パートナー企業リンク
DIGIKEY WORLDWIDE 996 1 発注する
MOUSER WORLDWIDE 495 1 発注する
ANGLIA Live EUROPE 3 1 発注する

販売代理店在庫データ: 2021-04-21

販売代理店

DIGIKEY

在庫

996

Min.Order

1

地域

WORLDWIDE 発注する

MOUSER

在庫

495

Min.Order

1

地域

WORLDWIDE 発注する

ANGLIA Live

在庫

3

Min.Order

1

地域

EUROPE 発注する

販売代理店在庫データ: 2021-04-21

ECCN (EU)

NEC

梱包タイプ

Tape And Reel

パッケージ

H2PAK-7

Operating Temperature (°C)

(最小)

-

(最大)

-

Budgetary Price (US$)* / Qty

16.0 / 1k

Country of Origin

CHINA

（*）概算用の希望小売単価（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。

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