SCTH35N65G2V-7AG

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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

主な特徴
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitance
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販売代理店からオーダー

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SCTH35N65G2V-7AG

H2PAK-7

Tape And Reel

1000

EAR99

CHINA

在庫チェック

Distributor availability ofSCTH35N65G2V-7AG

代理店名	地域	在庫	最小発注	Third party link
ARROW	EUROPE	1004	0	Order Now

代理店レポートによる在庫データ: 2020-01-12

代理店名

ARROW

在庫

1004

Min.Order

地域

EUROPE Order Now

代理店レポートによる在庫データ: 2020-01-12

SCTH35N65G2V-7AG

パッケージ

H2PAK-7

梱包タイプ

Tape And Reel

More Info

Unit Price (US$)

16.0*

Distributor availability ofSCTH35N65G2V-7AG

代理店名	地域	在庫	最小発注	Third party link
ARROW	EUROPE	1004	0	Order Now

代理店レポートによる在庫データ: 2020-01-12

代理店名

ARROW

在庫

1004

Min.Order

地域

EUROPE Order Now

代理店レポートによる在庫データ: 2020-01-12

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors

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技術文書

製品スペック
- 概要 Version Size Action
  
  DS12029
  Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 3.0
  617.48 KB
  PDF
  
  DS12029
  
  Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
  
  PDF

	概要	Version	Size	Action
	DS12029 Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package	3.0	617.48 KB	PDF

アプリケーションノート

概要	Version	Size	Action
AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses	1.1	555.54 KB	PDF
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp	1.0	6.39 MB	PDF
AN3152 The right technology for solar converters	1.4	416.3 KB	PDF

AN4671

How to fine tune your SiC MOSFET gate driver to minimize losses

PDF

AN5355

Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

PDF

AN3152

The right technology for solar converters

PDF

テクニカル･ノート & 技術解説

	概要	Version	Size	Action
	TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs	2.2	2.34 MB	PDF

TA0349

Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

PDF

ユーザマニュアル
- 概要 Version Size Action
  
  UM1575
  Spice model tutorial for Power MOSFETs 1.3
  1.51 MB
  PDF
  
  UM1575
  
  Spice model tutorial for Power MOSFETs
  
  PDF

	概要	Version	Size	Action
	UM1575 Spice model tutorial for Power MOSFETs	1.3	1.51 MB	PDF

関連資料

フライヤー

	概要	Version	Size	Action
	SiC MOSFET: The real breakthrough in high-voltage switching	1.0	401.67 KB	PDF
	SiC MOSFETs: The real breakthrough in high-voltage switching	3.0	651.11 KB	PDF

SiC MOSFET: The real breakthrough in high-voltage switching

PDF

SiC MOSFETs: The real breakthrough in high-voltage switching

PDF

パンフレット
- 概要 Version Size Action
  
  Electric vehicle (EV) ecosystem 1.1
  1.03 MB
  PDF
  
  Electric vehicle (EV) ecosystem
  
  PDF

	概要	Version	Size	Action
	Electric vehicle (EV) ecosystem	1.1	1.03 MB	PDF

カンファレンスペーパー

概要	Version	Size	Action
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices	1.0	760.82 KB	PDF
Cost benefits of a SiC MOSFET-based high frequency converter	1.0	1.8 MB	PDF
Design rules for paralleling of Silicon Carbide Power MOSFETs	1.0	582.21 KB	PDF
SiC and Silicon MOSFET solution for high frequency DC-AC converters	1.0	1.06 MB	PDF
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films	1.0	980.73 KB	PDF
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate	1.0	1.35 MB	PDF
Wide bandgap materials: revolution in automotive power electronics	1.0	792.49 KB	PDF

3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

PDF

Cost benefits of a SiC MOSFET-based high frequency converter

PDF

Design rules for paralleling of Silicon Carbide Power MOSFETs

PDF

SiC and Silicon MOSFET solution for high frequency DC-AC converters

PDF

Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

PDF

Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

PDF

Wide bandgap materials: revolution in automotive power electronics

PDF

製品型番	製品ステータス	パッケージ	グレード	RoHSコンプライアンスグレード	Material Declaration**
SCTH35N65G2V-7AG	Active	H2PAK-7	オートモーティブ	Ecopack1

SCTH35N65G2V-7AG

Package:

H2PAK-7

Material Declaration**:

More Info

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.