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  • This silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching losses are almost independent of junction temperature.

    主な特徴

    • Very high operating junction temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitances

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SCTWA90N65G2V TO-247 long leads Tube
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- - EAR99 -

販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください

SCTWA90N65G2V

パッケージ

TO-247 long leads

梱包タイプ

Tube

Unit Price (US$)

*

製品ステータス

Preview

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

-

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

推奨コンテンツ

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技術文書

    • 概要 Version Size Action
      DS12678
      Silicon carbide Power MOSFET 650 V, 90 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247™ long leads package
      1.0
      246.25 KB
      PDF
      DS12678

      Silicon carbide Power MOSFET 650 V, 90 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247™ long leads package

    • 概要 Version Size Action
      AN4671
      How to fine tune your SiC MOSFET gate driver to minimize losses
      1.1
      555.54 KB
      PDF
      AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
      1.0
      6.39 MB
      PDF
      AN3152
      The right technology for solar converters
      1.4
      416.3 KB
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      AN4671

      How to fine tune your SiC MOSFET gate driver to minimize losses

      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      AN3152

      The right technology for solar converters

    • 概要 Version Size Action
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
      PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

    • 概要 Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

関連資料

    • 概要 Version Size Action
      SiC MOSFET: The real breakthrough in high-voltage switching 1.0
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      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
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      Cost benefits of a SiC MOSFET-based high frequency converter 1.0
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      Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
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      SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
      1.06 MB
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      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
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      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
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      792.49 KB
      PDF

      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

製品型番 製品ステータス パッケージ グレード RoHSコンプライアンスグレード 材料宣誓書**
SCTWA90N65G2V
Preview
TO-247 long leads Industrial Ecopack2

SCTWA90N65G2V

Package:

TO-247 long leads

Material Declaration**:

Marketing Status

Preview

Package

TO-247 long leads

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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