This silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching losses are almost independent of junction temperature.
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|TO-247 long leads||Industrial||Ecopack2|| |
Package:TO-247 long leads
TO-247 long leads
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.