製品概要
概要
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
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機能一覧
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
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STMicroelectronics - STD13NM60N
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すべてのリソース
| Resource title | Version | Latest update | Actions | Details | ダウンロード |
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SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |