This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
- Extremely high dv/dt capability
- ESD improved capability
- 100% avalanche tested
- Gate charge minimized
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