These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Low gate input resistance
- Very low turn-off switching losses
- 100% avalanche tested
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