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This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
主な特徴
- Intrinsic capacitances and Qg minimized
- TO-3PF for higher creepage between leads
- High speed switching
- 100% avalanche tested
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| STFW3N170 | TO-3PF | Tube |
Active
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6.5 | 1000 | EAR99 | KOREA (south) | 在庫チェック | Buy now |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
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写真 製品型番 製造元 概要 ST MOSFET Finder ST MOSFET product finder application for Android and iOS 製品型番MOSFET product finder application for Android and iOS
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
