This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
- Intrinsic capacitances and Qg minimized
- TO-3PF for higher creepage between leads
- High speed switching
- 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Choose among our MDmesh MOSFET Series, featuring fast recovery diode (DK5) and very high voltage super-junction MOSFETs (K5).
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STMicroelectronics - STFW3N170
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Quality and Reliability
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