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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
- AEC-Q101 qualified
- Low-loss series IGBT
- Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
- 6 µs minimum short-circuit withstanding time at TJ = 150 °C
サンプル & 購入
| 製品型番 | 梱包タイプ | 製品ステータス | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|
| STG200M65F2D8AG | Tape And Reel |
アクティブ
|
EAR99 | FRANCE | 販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください |
STG200M65F2D8AG
梱包タイプ
Tape And Reel製品ステータス
アクティブ(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
