STG200M65F2D8AG

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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

  • All features

    • AEC-Q101 qualified
    • Low-loss series IGBT
    • Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C
    • 6 µs minimum short-circuit withstanding time at TJ = 150 °C

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STMicroelectronics - STG200M65F2D8AG

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Quality and Reliability

Part Number Marketing Status Grade Material Declaration**
STG200M65F2D8AG
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Automotive

STG200M65F2D8AG

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Automotive

Material Declaration**:

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Automotive

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STG200M65F2D8AG
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