Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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All features
- AEC-Q101 qualified
- Low-loss series IGBT
- Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
- 6 µs minimum short-circuit withstanding time at TJ = 150 °C
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STG200M65F2D8AG
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All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 21 Mar 2019 | 21 Mar 2019 |
Quality and Reliability
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Temperature (°C) | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STG200M65F2D8AG | | | distributors No availability of distributors reported, please contact our sales office | DICE | Carrier Tape | CHINA | EAR99 | NEC | -40 | 175 | -40 | |||
STG200M65F2D8AG Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors