STGB30H60DLLFBAG
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Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

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Product overview

概要

This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • AEC-Q101 qualified
    • High-speed switching series
    • Logic level gate drive
    • Low VF soft recovery co-packaged diode
    • Maximum junction temperature: TJ = 175 °C
    • Minimized tail current
    • VCE(sat) = 1.7 V (typ.) at IC = 30 A
    • Safer paralleling
    • Tight parameter distribution
    • Low thermal resistance

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STMicroelectronics - STGB30H60DLLFBAG

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STGB30H60DLLFBAG
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Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed D2PAK Automotive Ecopack1 10 2019-03-25T00:00:00.000+01:00

STGB30H60DLLFBAG

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Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

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General Description

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

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D2PAK

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Automotive

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General Description:

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

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