-
This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
主な特徴
- Low on-voltage drop (VCE(sat))
- High current capability
- Very soft ultra fast recovery antiparallel diode
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 概要 | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|
| STGF10NB60SD | TO-220FP | Tube | アクティブ | 1.0 | 1000 | EAR99 | CHINA | 16 A, 600 V low drop IGBT with soft and fast recovery diode | 在庫チェック | 購入 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
| 製品型番 | 製品ステータス | 概要 | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|---|
| STGF10NB60SD | アクティブ | 16 A, 600 V low drop IGBT with soft and fast recovery diode | TO-220FP | インダストリアル | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
