STGF10NB60SD

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16 A, 600 V low drop IGBT with soft and fast recovery diode

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Product overview

Description

This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).

  • All features

    • Low on-voltage drop (VCE(sat))
    • High current capability
    • Very soft ultra fast recovery antiparallel diode

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGF10NB60SD

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGF10NB60SD
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16 A, 600 V low drop IGBT with soft and fast recovery diode TO-220FP Industrial Ecopack2

STGF10NB60SD

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16 A, 600 V low drop IGBT with soft and fast recovery diode

Material Declaration**:

Marketing Status

Active

General Description

16 A, 600 V low drop IGBT with soft and fast recovery diode

Package

TO-220FP

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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