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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主な特徴
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.8 V (typ.) @ IC = 40 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 概要 | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|
| STGFW40V60DF | TO-3PF | Tube | アクティブ | 3.1 | 1000 | EAR99 | KOREA (south) | Trench gate field-stop IGBT, V series 600 V, 40 A very high speed | 販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください | 購入 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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| 製品型番 | 製品ステータス | 概要 | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|---|
| STGFW40V60DF | アクティブ | Trench gate field-stop IGBT, V series 600 V, 40 A very high speed | TO-3PF | インダストリアル | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
