STGO30H60DLLFBAG
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Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO-LL package

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Product overview

概要

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Designed for automotive applications
    • Maximum junction temperature: TJ = 175 °C
    • Logic level gate drive
    • High-speed switching series
    • Minimized tail current
    • VCE(sat) = 1.7 V (typ.) @ IC = 30 A
    • Low VF soft-recovery co-packaged diode
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance

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STMicroelectronics - STGO30H60DLLFBAG

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STGO30H60DLLFBAG
Active
Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO-LL package TO-LL Automotive Ecopack2 10 2024-06-04T00:00:00.000+02:00

STGO30H60DLLFBAG

Package:

Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO-LL package

Material Declaration**:

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Active

General Description

Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO-LL package

Package

TO-LL

Grade

Automotive

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General Description:

Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO-LL package

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