STGP10M65DF2
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Trench gate field-stop IGBT M series, 650 V 10 A low loss

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Product overview

概要

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • All features

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 10 A
    • Tight parameter distribution
    • Safer paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode
    • Maximum junction temperature: TJ = 175 °C

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STMicroelectronics - STGP10M65DF2

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STGP10M65DF2
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Trench gate field-stop IGBT M series, 650 V 10 A low loss TO-220 Industrial Ecopack2 - -

STGP10M65DF2

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Trench gate field-stop IGBT M series, 650 V 10 A low loss

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Active

General Description

Trench gate field-stop IGBT M series, 650 V 10 A low loss

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TO-220

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Industrial

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STGP10M65DF2

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General Description:

Trench gate field-stop IGBT M series, 650 V 10 A low loss

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