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This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
主な特徴
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short circuit rated
- Ultrafast soft recovery antiparallel diode
サンプル & 購入
製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格(USS) | 数量 | ECCN (US) | Country of Origin | 概要 | 販売代理店からオーダー | STからオーダー |
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STGP30H60DF | TO-220AB | Tube | アクティブ | 1.95 | 1000 | EAR99 | CHINA | 600 V, 30 A high speed trench gate field-stop IGBT | 在庫チェック | サンプル入手 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール・ハードウェア
製品型番 | 製品ステータス | 概要 | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
---|---|---|---|---|---|---|
STGP30H60DF | アクティブ | 600 V, 30 A high speed trench gate field-stop IGBT | TO-220AB | インダストリアル | Ecopack2 | |
STGP30H60DF
Package:
600 V, 30 A high speed trench gate field-stop IGBTMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.