STGSH50M120D

量産中
Design Win
MySTに保存する

ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode

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製品概要

概要

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is optimized both in conduction and switching losses for hard switching commutation, where short-circuit ruggedness is an essential feature. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency and power density in industrial drives.

  • 特徴

    • Low-loss and short-circuit rugged IGBTs
    • Maximum junction temperature: TJ = 175 °C
    • VCE(sat) = 1.8 V (typ.) @ IC = 50 A
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient
    • Soft and fast-recovery antiparallel diode
    • Isolation rating of 3.4 kVrms/min
    続きを読む 一部を表示

eDesignSuite

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太陽光発電システム
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Digital Power Workbench

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EDAシンボル / フットプリント / 3Dモデル

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品質 & 信頼性

製品型番 マーケティング･ステータス パッケージ グレード RoHSコンプライアンスグレード 材料宣誓書**
STGSH50M120D
量産中
ACEPACK SMIT インダストリアル Ecopack2

STGSH50M120D

Package:

ACEPACK SMIT

Material Declaration**:

More Info

Marketing Status

量産中

Package

ACEPACK SMIT

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.comで提供している材料宣誓書は、パッケージ･ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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