Product overview
概要
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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All features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V (typ.) @ IC = 25 A
- 5 μs minimum short circuit withstand time at TJ = 150 °C
- Safe paralleling
- Low thermal resistance
- Very fast recovery antiparallel diode
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGW25H120DF2
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すべてのリソース
| Resource title | Version | Latest update | Actions | Details | ダウンロード |
|---|
SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHSコンプライアンスグレード | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STGW25H120DF2 | Active 交換品交換品 | TO-247 | Industrial | Ecopack2 | - | - |
(**) st.comで提供している材料宣誓書は、パッケージ･ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください
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Sample & Buy
| Part Number | 製品ステータス | Budgetary Price (US$)*/Qty | STから購入 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小 | 最大 | |||||||||||||
| STGW25H120DF2 | | | distributors 販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください | |||||||||||
STGW25H120DF2 Active
販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください
（*）概算用の参考価格（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。