STGW25H120DF2

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Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • VCE(sat) = 2.1 V (typ.) @ IC = 25 A
    • 5 μs minimum short circuit withstand time at TJ = 150 °C
    • Safe paralleling
    • Low thermal resistance
    • Very fast recovery antiparallel diode

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STMicroelectronics - STGW25H120DF2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STGW25H120DF2
Active
TO-247 Industrial Ecopack2

STGW25H120DF2

Package:

TO-247

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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EAR99 NEC Tube TO-247 -55 175 CHINA

STGW25H120DF2 Active

Package:
TO-247
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

STGW25H120DF2

ECCN (EU):

NEC

Packing Type:

Tube

Operating Temperature (°C)

Min:

-55

Max:

175

Country of Origin:

CHINA

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors