STGW30H65FB
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Trench gate field-stop 650 V, 30 A high speed HB series IGBT

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Product overview

概要

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • VCE(sat) = 1.55 V (typ.) at IC = 30 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance

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STMicroelectronics - STGW30H65FB

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STGW30H65FB
Active
Trench gate field-stop 650 V, 30 A high speed HB series IGBT TO-247 Industrial Ecopack2 - -

STGW30H65FB

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Trench gate field-stop 650 V, 30 A high speed HB series IGBT

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Active

General Description

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

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TO-247

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Industrial

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General Description:

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

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