STGWA50M65DF2AG
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Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package

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Product overview

概要

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

  • All features

    • AEC-Q101 qualified
    • Maximum junction temperature: TJ = 175 °C
    • Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
    • Minimized tail current
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast-recovery antiparallel diode

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STMicroelectronics - STGWA50M65DF2AG

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STGWA50M65DF2AG
Active
Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package TO-247 long leads Automotive Ecopack2 10 2024-06-04T00:00:00.000+02:00

STGWA50M65DF2AG

Package:

Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package

Material Declaration**:

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Active

General Description

Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package

Package

TO-247 long leads

Grade

Automotive

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General Description:

Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package

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(*)概算用の参考価格(US$)です。現地通貨でのお見積りについては、STのセールス・オフィスまたは販売代理店までお問い合わせください。