-
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主な特徴
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 概要 | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|
| STGWT30H60DFB | TO-3P | Tube | アクティブ | 2.35 | 1000 | EAR99 | KOREA (south) | Trench gate field-stop 600 V, 30 A high speed HB series IGBT | 販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください |
STGWT30H60DFB
パッケージ
TO-3P梱包タイプ
TubeUnit Price (US$)
2.35*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
| 製品型番 | 製品ステータス | 概要 | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWT30H60DFB | アクティブ | Trench gate field-stop 600 V, 30 A high speed HB series IGBT | TO-3P | インダストリアル | Ecopack1 | |
STGWT30H60DFB
Package:
Trench gate field-stop 600 V, 30 A high speed HB series IGBTMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
