STGWT30H60DFB

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製品概要

概要

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特徴
Maximum junction temperature: T_J = 175 °C

High speed switching series

Minimized tail current

Low saturation voltage: V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A

Tight parameter distribution

Safe paralleling

Positive V_CE(sat) temperature coefficient

Low thermal resistance

Very fast soft recovery antiparallel diode
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1200 V IGBT M series

Optimized for hard-switching applications up to 20 kHz

Watch the video (04:34)

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