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This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
主な特徴
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Logic level
- Wettable flank package
サンプル & 購入
| 製品型番 | パッケージ | Packing Type | Marketing Status | Budgetary Price (US$)* | 数量 | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STL19N3LLH6AG | PowerFLAT 5x6 WF | Tape And Reel |
Active
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- | - | EAR99 | CHINA | No availability of distributors reported, please contact our sales office |
STL19N3LLH6AG
パッケージ
PowerFLAT 5x6 WFPacking Type
Tape And ReelUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
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写真 Part number 製造元 Description ST MOSFET Finder ST MOSFET product finder application for Android and iOS 製品型番MOSFET product finder application for Android and iOS
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| 製品型番 | Marketing Status | パッケージ | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STL19N3LLH6AG |
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PowerFLAT 5x6 WF | オートモーティブ | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
