This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
- Very low switching gate charge
- Very low thermal resistance
- Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device
Recommended for you
|製品型番||Marketing Status||パッケージ||Grade||RoHS Compliance Grade||Material Declaration**|
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.