This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
- Very low switching gate charge
- Very low thermal resistance
- Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device
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