This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize on-resistance and gate charge. It is therefore suitable as primary side swich allowing high efficiencies.
- 100% avalanche tested
- Low intrinsic capacitances
- Gate charge minimized
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
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