These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
- Extremely low gate charge and input capacitance
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Extremely high dv/dt and avalanche capabilities
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Discover the MDmesh™ DM2 Series of fast recovery diode MOSFETs (400 V - 650 V), ideal for full-bridge phase-shifted Zero Voltage Switching (ZVS) topologies.
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.