STB24N60DM2

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N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package

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Product overview

Description

These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

  • All features

    • Extremely low gate charge and input capacitance
    • Lower RDS(on)x area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected
    • Extremely high dv/dt and avalanche capabilities

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STB24N60DM2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STB24N60DM2
Active
D2PAK Industrial Ecopack2

STB24N60DM2

Package:

D2PAK

Material Declaration**:

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Marketing Status

Active

Package

D2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors