This device is N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.
- Outstanding dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitances
- Very low RDS(on)
- Extremely low trr
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