This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
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