STGB30V60DF
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Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

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Product overview

概要

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • Tail-less switching off
    • VCE(sat) = 1.85 V (typ.) @ IC = 30 A
    • Tight parameter distribution
    • Safe paralleling
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

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STMicroelectronics - STGB30V60DF

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Part Number Marketing Status General Description Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STGB30V60DF
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Trench gate field-stop IGBT, V series 600 V, 30 A very high speed D2PAK Industrial Ecopack2 - -

STGB30V60DF

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Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

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General Description

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

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D2PAK

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Industrial

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General Description:

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

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