Product overview
概要
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.
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All features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low VCE(sat) = 1.6 V (typ.) @ IC = 50 A
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
- Excellent switching performance thanks to the extra driving kelvin pin
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STMicroelectronics - STGH50H65B2-7AG
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHSコンプライアンスグレード | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGH50H65B2-7AG | Active 交換品交換品 | Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT in an H2PAK-7 package | H2PAK-7 | Automotive | Ecopack1 | 10 | 2024-08-12T00:00:00.000+02:00 | |
STGH50H65B2-7AG
Package:
Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT in an H2PAK-7 packageMaterial Declaration**:
(**) st.comで提供している材料宣誓書は、パッケージ･ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください
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Sample & Buy
| Part Number | 製品ステータス | Budgetary Price (US$)*/Qty | STから購入 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | General Description | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STGH50H65B2-7AG | | | distributors 販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください |
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STGH50H65B2-7AG Active
販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください
（*）概算用の参考価格（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。