STGW60V60F

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製品概要

概要

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特徴
Maximum junction temperature: T_J = 175 °C

Tail-less switching off

V_CE(sat) = 1.85 V (typ.) @ I_C = 60 A

Tight parameter distribution

Safe paralleling

Low thermal resistance
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注目ビデオ

すべてを見る

1200 V IGBT M series

Optimized for hard-switching applications up to 20 kHz

Watch the video (04:34)

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	製品型番	ステータス	概要	タイプ	サプライヤ
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