STH60N099DM9-2AG
Active
Education Design Win
Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET in an H2PAK-2 package

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Product overview

概要

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

  • All features

    • AEC-Q101 qualified
    • Fast-recovery body diode
    • Worldwide best RDS(on) per area among silicon-based fast recovery devices
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggednes

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STMicroelectronics - STH60N099DM9-2AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STH60N099DM9-2AG
Active
H2PAK-2 Automotive Ecopack2 10 2024-06-04T00:00:00.000+02:00

STH60N099DM9-2AG

Package:

H2PAK-2

Material Declaration**:

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Marketing Status

Active

Package

H2PAK-2

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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