STH60N099DM9-2AG

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Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET in an H2PAK-2 package

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Product overview

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

  • All features

    • AEC-Q101 qualified
    • Fast-recovery body diode
    • Worldwide best RDS(on) per area among silicon-based fast recovery devices
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely dv/dt ruggednes
    • Excellent switching performance thanks to the extra driving source pin

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STMicroelectronics - STH60N099DM9-2AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH60N099DM9-2AG
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H2PAK-2 Automotive Ecopack2

STH60N099DM9-2AG

Package:

H2PAK-2

Material Declaration**:

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Marketing Status

Active

Package

H2PAK-2

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors