STN1NK60ZL

Active

N-channel 600 V, 10 Ohm typ., 0.44 A Zener-protected SuperMESH(TM) Power MOSFET in SOT-223 package

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  • This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

    主な特徴

    • 100% avalanche tested
    • Extremely high dv/dt capability
    • Gate charge minimized
    • ESD improved capability

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STN1NK60ZL SOT-223 Tape And Reel
Active
- - EAR99 CHINA

販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください

STN1NK60ZL

パッケージ

SOT-223

梱包タイプ

Tape And Reel

Unit Price (US$)

*

製品ステータス

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技術文書

    • 概要 Version Size Action
      DS10400
      N-channel 600 V, 10.4 Ω typ., 0.44 A SuperMESH™ Power MOSFET in a SOT-223 package
      2.0
      703.49 KB
      PDF
      DS10400

      N-channel 600 V, 10.4 Ω typ., 0.44 A SuperMESH™ Power MOSFET in a SOT-223 package

    • 概要 Version Size Action
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
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      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
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      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
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      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 概要 Version Size Action
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
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      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 概要 Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
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      Spice model tutorial for Power MOSFETs

製品型番 製品ステータス パッケージ グレード RoHSコンプライアンスグレード Material Declaration**
STN1NK60ZL
Active
SOT-223 インダストリアル Ecopack2

STN1NK60ZL

Package:

SOT-223

Material Declaration**:

Marketing Status

Active

Package

SOT-223

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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