These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Worldwide best RDS(on)*area amongst the silicon based devices
- Higher VDSS rating, high dv/dt capability
- Excellent switching performance
- Easy to drive, 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
MDmesh M5 series: discover our broad range of high-voltage super-junction MOSFETs, optimized for high-power PFC and PWM topologies in hard switching applications.
|TO-247 long leads||インダストリアル||Ecopack1 (*)||
Package:TO-247 long leads
TO-247 long leads
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.