1次側整流回路の力率改善(PFC) )用途の場合、ダイオードは直接交流電源に接続されます。STは、確かな堅牢性をもつSiCダイオードによって、AEC-Q101規格に準拠した車載グレードのSiCデバイス初のサプライヤとなりました。また、低VFと高サージ耐性の改良が堅牢性の向上につながり、パワー・コンバータの効率と信頼性が向上しています。


1200 V SiC automotive-grade diodes with the lowest forward voltage drop ever

The new AEC-Q101 1200 V SiC diodes – 10-, 15- and 20-amp rated – are ideal for use in high-power applications such as charging stations, OBC, power supplies, and motor drives. Their surge capability for a 10 ms pulse is in the range of 7 times the diodes’ nominal current, and confers these 1200 V silicon-carbide diodes the state-of-the-art robustness. With a typical forward voltage drop (V F) of 1.35 V at nominal current and room temperature, they set the highest level/standard on the market. Available in D²PAK and TO-220AC packages, the STPSC10H12-Y, STPSC15H12-Y and STPSC20H12-Y fulfill the automotive robustness and performance requirements.