The use of high-voltage silicon-carbide diodes in power converter circuits enables to jump over traditional efficiency and power density hurdles.
ST has designed 2 trade-off versions of 650V and 1200V diodes - with the best-in-class forward voltage drop (VF) and surge capability (IFSM) - to drastically limit the conduction losses and lower the diode junction temperature, which is key for secondary rectification functions.
In PFC applications – for primary rectification – the diodes are directly connected to the main supply. The proven robustness our silicon carbide diodes has enabled ST to be the first supplier to release automotive-grade and AEC-Q101-qualified silicon carbide devices on the market. And our engineers work on low VF and high surge capability now contributes to ever-increasing design robustness, for augmented converter efficiency and reliability.
ST’s automotive-grade 650 V diode series ranges from 6 to 40 A, in TO-220, TO-220ACIns, DO-247, TO-247, I²PAK and DPAK packages. Our very low VF and high IFSM series automotive-grade 1200 V devices range from 10 to 20 A, in a TO-220 package.
STMicroelectronics presents ACEPACK SMIT: a surface-mount power module with top-side cooling, which ensures higher power density and improved thermal management for very efficient and more compact systems.