STGH30H65DFB-2AG
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Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package

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Product overview

概要

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • AEC-Q101 qualified
    • High-speed switching series
    • Maximum junction temperature: TJ = 175 °C
    • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
    • Safer paralleling
    • Tight parameter distribution
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode

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STMicroelectronics - STGH30H65DFB-2AG

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STGH30H65DFB-2AG
Active
Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package H2PAK-2 Automotive Ecopack1 10 2024-06-04T00:00:00.000+02:00

STGH30H65DFB-2AG

Package:

Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package

Material Declaration**:

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Marketing Status

Active

General Description

Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package

Package

H2PAK-2

Grade

Automotive

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STGH30H65DFB-2AG

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Part Number:

STGH30H65DFB-2AG

Operating Temperature (°C) (max):

175

General Description:

Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package

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販売代理店在庫データ:

(*)概算用の参考価格(US$)です。現地通貨でのお見積りについては、STのセールス・オフィスまたは販売代理店までお問い合わせください。