Product overview
概要
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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All features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.6 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
- Excellent switching performance thanks to the extra driving kelvin pin
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STMicroelectronics - STGHU30M65DF2AG
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHSコンプライアンスグレード | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGHU30M65DF2AG | Active 交換品交換品 | Automotive-grade trench gate field-stop IGBT M series, 650 V, 30 A low-loss M series IGBT in an HU3PAK package | HU3PAK | Automotive | Ecopack1 | 10 | 2024-07-30T00:00:00.000+02:00 |
(**) st.comで提供している材料宣誓書は、パッケージ･ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください
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Sample & Buy
| Part Number | 製品ステータス | Budgetary Price (US$)*/Qty | STから購入 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小 | 最大 | ||||||||||||||
| STGHU30M65DF2AG | | | distributors 販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください |
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STGHU30M65DF2AG Active
販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください
（*）概算用の参考価格（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。