製品概要
概要
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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特徴
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
- Very fast and soft recovery co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STGP20H65DFB2
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すべてのリソース
| タイトル | バージョン | 更新日 |
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SPICE models (1)
| タイトル | バージョン | 更新日 | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 19 May 2020 | 19 May 2020 |