STGW80H65DFB
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Trench gate field-stop 650 V, 80 A high speed HB series IGBT

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Product overview

概要

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
    • Tight parameter distribution
    • Safe paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

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STMicroelectronics - STGW80H65DFB

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STGW80H65DFB
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Trench gate field-stop 650 V, 80 A high speed HB series IGBT TO-247 Industrial Ecopack2 10 2019-03-25T00:00:00.000+01:00

STGW80H65DFB

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Trench gate field-stop 650 V, 80 A high speed HB series IGBT

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General Description

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

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TO-247

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Industrial

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Trench gate field-stop 650 V, 80 A high speed HB series IGBT

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