STGWA60V60DWFAG
NRND
Design Win
Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

Download datasheet

製品概要

概要

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is shown at turn-off of the SiC diode and the already minimal capacitive turn-off behavior is independent of temperature. Its high forward surge capability ensures good robustness during transient phases.

  • All features

    • AEC-Q101 qualified
    • Maximum junction temperature: TJ = 175 °C
    • VCE(sat) = 1.85 V (typ.) @ IC = 60 A
    • Tail-less switching current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient
    • Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGWA60V60DWFAG

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

Symbols

Footprints

Footprints

3D model

3D models

Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STGWA60V60DWFAG
NRND
Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode TO-247 long leads Automotive Ecopack2 - -

STGWA60V60DWFAG

Package:

Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

Material Declaration**:

PDF XML

Marketing Status

NRND

General Description

Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

Package

TO-247 long leads

Grade

Automotive

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

Sample & Buy

Loading...
Part Number
製品ステータス
Budgetary Price (US$)*/Qty
STから購入
Order from distributors
Package
Packing Type
RoHS
Country of Origin
ECCN (US)
ECCN (EU)
Operating temperature (°C)
General Description
最小
最大
STGWA60V60DWFAG

販売代理店在庫 STGWA60V60DWFAG

販売代理店
地域 Stock 最小発注数量 パートナー企業リンク

販売代理店在庫データ:

販売代理店に在庫がない場合は、STのセールス・オフィスまでお問い合わせください

STGWA60V60DWFAG NRND

Budgetary Price (US$)*/Qty:
-
Package:
Packing Type:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

Part Number:

STGWA60V60DWFAG

Operating Temperature (°C)

Min:

Max:

General Description:

Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode

販売代理店

販売代理店在庫データ:

(*)概算用の参考価格(US$)です。現地通貨でのお見積りについては、STのセールス・オフィスまたは販売代理店までお問い合わせください。