Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is shown at turn-off of the SiC diode and the already minimal capacitive turn-off behavior is independent of temperature. Its high forward surge capability ensures good robustness during transient phases.
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All features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tail-less switching current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
- Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration
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STMicroelectronics - STGWA60V60DWFAG
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWA60V60DWFAG | Active | Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode | TO-247 long leads | Automotive | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Temperature (°C) | General Description | Operating Temperature (°C) (min) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||||
| STGWA60V60DWFAG | | | distributors No availability of distributors reported, please contact our sales office | TO-247 long leads | Tube | CHINA | EAR99 | NEC | -55 | 175 | Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode | -55 | Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode | |||
STGWA60V60DWFAG Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors